Optical study of SiGe films grown with low temperature Si buffer

Y. H. Luo, J. Wan, J. L. Liu, K. L. Wang

研究成果: Conference article同行評審

摘要

In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, photoluminescence and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that using proper growth conditions of the low temperature Si buffer, the Si buffer became tensily strained and gave rise to the compliant effect. High-quality SiGe films with low threading dislocation density have been obtained.

原文English
頁(從 - 到)P3.11.1-P3.11.6
期刊Materials Research Society Symposium - Proceedings
673
DOIs
出版狀態Published - 2001
事件Dislocations and Deformation Mechanics in Thin Films and Small Structures - San Francisco, CA, United States
持續時間: 2001 四月 172001 四月 19

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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