摘要
We report the first room-temperature photoreflectance (PR) measurement for self-assemble Ge quantum dot/Si superlattice grown by chemical vapor deposition (CVD) system. The relevant critical energies of transitions are obtained through fitting the PR spectrum. They are in good agreement with the result of theoretical calculations for the wetting layer with strain and a quantum dot of disk shape.
| 原文 | English |
|---|---|
| 頁(從 - 到) | L1045-L1047 |
| 期刊 | Japanese Journal of Applied Physics |
| 卷 | 44 |
| 發行號 | 33-36 |
| DOIs | |
| 出版狀態 | Published - 2005 8月 26 |
All Science Journal Classification (ASJC) codes
- 一般工程
- 一般物理與天文學
指紋
深入研究「Optical transitions in a self-assembled Ge quantum Dot/Si superlattice measured by photoreflectance spectroscopy」主題。共同形成了獨特的指紋。引用此
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