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Optical transitions in a self-assembled Ge quantum Dot/Si superlattice measured by photoreflectance spectroscopy

研究成果: Article同行評審

摘要

We report the first room-temperature photoreflectance (PR) measurement for self-assemble Ge quantum dot/Si superlattice grown by chemical vapor deposition (CVD) system. The relevant critical energies of transitions are obtained through fitting the PR spectrum. They are in good agreement with the result of theoretical calculations for the wetting layer with strain and a quantum dot of disk shape.

原文English
頁(從 - 到)L1045-L1047
期刊Japanese Journal of Applied Physics
44
發行號33-36
DOIs
出版狀態Published - 2005 8月 26

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

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