Optimal device design of FinFETs on a bulk substrate

Yi Bo Liao, Wei-Chou Hsu, Meng-Hsueh Chiang, Hsun Li, Chia Long Lin, Yu Shen Lai

研究成果: Conference contribution

5 引文 斯高帕斯(Scopus)

摘要

An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.

原文English
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態Published - 2011 9月 26
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
持續時間: 2011 6月 212011 6月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
國家/地區Taiwan
城市Tao-Yuan
期間11-06-2111-06-24

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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