Optimization of Parameters for TVS breakdown voltage: Design and Fabrication

Tzu Lang Shih, Wen Hsi Lee

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

原文English
主出版物標題Proceedings of the International Conference on Ion Implantation Technology
編輯Mulpuri V. Rao
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479952120
DOIs
出版狀態Published - 2014 10月 29
事件20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States
持續時間: 2014 6月 302014 7月 4

出版系列

名字Proceedings of the International Conference on Ion Implantation Technology

Other

Other20th International Conference on Ion Implantation Technology, IIT 2014
國家/地區United States
城市Portland
期間14-06-3014-07-04

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 凝聚態物理學

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