Optimization of Parameters for TVS breakdown voltage: Design and Fabrication

Tzu Lang Shih, Wen-Shi Lee

研究成果: Conference contribution

2 引文 (Scopus)

摘要

The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

原文English
主出版物標題Proceedings of the International Conference on Ion Implantation Technology
編輯Mulpuri V. Rao
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479952120
DOIs
出版狀態Published - 2014 十月 29
事件20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States
持續時間: 2014 六月 302014 七月 4

出版系列

名字Proceedings of the International Conference on Ion Implantation Technology

Other

Other20th International Conference on Ion Implantation Technology, IIT 2014
國家United States
城市Portland
期間14-06-3014-07-04

指紋

suppressors
Electric breakdown
Zener diodes
electrical faults
Fabrication
avalanche diodes
fabrication
optimization
Diodes
Electric potential
electric potential
Capacitance
capacitance
diodes
Transistors
transistors
simulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

引用此文

Shih, T. L., & Lee, W-S. (2014). Optimization of Parameters for TVS breakdown voltage: Design and Fabrication. 於 M. V. Rao (編輯), Proceedings of the International Conference on Ion Implantation Technology [6940007] (Proceedings of the International Conference on Ion Implantation Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2014.6940007
Shih, Tzu Lang ; Lee, Wen-Shi. / Optimization of Parameters for TVS breakdown voltage : Design and Fabrication. Proceedings of the International Conference on Ion Implantation Technology. 編輯 / Mulpuri V. Rao. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings of the International Conference on Ion Implantation Technology).
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Shih, TL & Lee, W-S 2014, Optimization of Parameters for TVS breakdown voltage: Design and Fabrication. 於 MV Rao (編輯), Proceedings of the International Conference on Ion Implantation Technology., 6940007, Proceedings of the International Conference on Ion Implantation Technology, Institute of Electrical and Electronics Engineers Inc., 20th International Conference on Ion Implantation Technology, IIT 2014, Portland, United States, 14-06-30. https://doi.org/10.1109/IIT.2014.6940007

Optimization of Parameters for TVS breakdown voltage : Design and Fabrication. / Shih, Tzu Lang; Lee, Wen-Shi.

Proceedings of the International Conference on Ion Implantation Technology. 編輯 / Mulpuri V. Rao. Institute of Electrical and Electronics Engineers Inc., 2014. 6940007 (Proceedings of the International Conference on Ion Implantation Technology).

研究成果: Conference contribution

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N2 - The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

AB - The design and fabrication of TVS (Transient Voltage Suppressor) devices with low junction capacitance is discussed in this paper. The principle structure consists of two diodes and one zener diode. In order to reduce the high device capacitance caused by the highly doped zener diode, two diodes are added in series with the zener. A NPN transistor is created within the structure giving the device better current handling ability. Optimization is accomplished by simulation. Then the device is fabricated according to the design and conditions discussed. The result is compared with the simulation, verifying the design studied.

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Shih TL, Lee W-S. Optimization of Parameters for TVS breakdown voltage: Design and Fabrication. 於 Rao MV, 編輯, Proceedings of the International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6940007. (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/IIT.2014.6940007