Optoelectrical characteristics of green lightemitting diodes containing thick InGaN wells with digitally grown InN/GaN

Chun Ta Yu, Wei-Chi Lai, Cheng Hsiung Yen, Hsu-Cheng Hsu, Shoou-Jinn Chang

研究成果: Article

10 引文 (Scopus)

摘要

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller s value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm2 output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.

原文English
期刊Optics Express
22
發行號SUPPL. 3
DOIs
出版狀態Published - 2014 一月 1

指紋

light emitting diodes
diodes
activation energy
photoluminescence
optical properties
output
temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

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title = "Optoelectrical characteristics of green lightemitting diodes containing thick InGaN wells with digitally grown InN/GaN",
abstract = "Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller s value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm2 output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23{\%}.",
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T1 - Optoelectrical characteristics of green lightemitting diodes containing thick InGaN wells with digitally grown InN/GaN

AU - Yu, Chun Ta

AU - Lai, Wei-Chi

AU - Yen, Cheng Hsiung

AU - Hsu, Hsu-Cheng

AU - Chang, Shoou-Jinn

PY - 2014/1/1

Y1 - 2014/1/1

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AB - Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller s value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm2 output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.

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