Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young

研究成果: Article同行評審

162 引文 斯高帕斯(Scopus)

摘要

The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.

原文English
頁(從 - 到)674-677
頁數4
期刊Journal of Alloys and Compounds
479
發行號1-2
DOIs
出版狀態Published - 2009 六月 24

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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