Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

The ZnO thin films were prepared on the quartz substrate by the sol-gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO₂ electrodes. The ZnO thin films were crystallized at various temperatures (600-700 °C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I-V measurements, the 650 °C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.