Optoelectronic characteristics of UV photodetector based on ZnO nanopillar thin films prepared by sol-gel method

K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

ZnO thin films were prepared on a quartz substrate by sol-gel method and a UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact with 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various crystallized temperature (600-700°C) for 1 hour in pure oxygen atmosphere, and were then analyzed by X-ray diffraction (XRD) and the scanning electron microscopy (SEM) to investigate the thin film crystallized structures, From photoluminescence (PL) and I-V measurement, the 650 C thin film not only possessed a better crystallization but also had nanopillar structures that revealed an excellent characteristic of UV photodetector.

原文English
頁(從 - 到)922-925
頁數4
期刊Materials Transactions
50
發行號4
DOIs
出版狀態Published - 2009 四月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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