Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Ebinazar B. Namdas; Ben B.Y. Hsu; Jonathan D. Yuen; Ifor D.W. Samuel; Alan J. Heeger

doi:10.1002/adma.201004102

Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

Ebinazar B. Namdas, Ben B.Y. Hsu, Jonathan D. Yuen, Ifor D.W. Samuel, Alan J. Heeger

材料科學及工程學系

研究成果: Article › 同行評審

36 引文斯高帕斯（Scopus）

摘要

The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO₂ and SiN_x dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiN_x gate dielectric and can reach a brightness as high as 4500 cd/m².

原文	English
頁（從 - 到）	2353-2356
頁數	4
期刊	Advanced Materials
卷	23
發行號	20
DOIs	https://doi.org/10.1002/adma.201004102
出版狀態	Published - 2011 5月 24

All Science Journal Classification (ASJC) codes

一般材料科學
材料力學
機械工業

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10.1002/adma.201004102

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abstract = "The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m2.",

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AU - Heeger, Alan J.

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Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors

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