TY - GEN
T1 - Optoelectronic investigation of Sb-doped Cu(In,Ga)Se2
AU - Mansfield, Lorelle M.
AU - Kuciauskas, Darius
AU - Dippo, Patricia
AU - Li, Jian V.
AU - Bowers, Karen
AU - To, Bobby
AU - Dehart, Clay
AU - Ramanathan, Kannan
PY - 2015/12/14
Y1 - 2015/12/14
N2 - Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.
AB - Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.
UR - http://www.scopus.com/inward/record.url?scp=84961572822&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961572822&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7356156
DO - 10.1109/PVSC.2015.7356156
M3 - Conference contribution
AN - SCOPUS:84961572822
T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Y2 - 14 June 2015 through 19 June 2015
ER -