Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2

Lorelle M. Mansfield, Darius Kuciauskas, Patricia Dippo, Jian V. Li, Karen Bowers, Bobby To, Clay Dehart, Kannan Ramanathan

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.

原文English
文章編號7234835
頁(從 - 到)1769-1774
頁數6
期刊IEEE Journal of Photovoltaics
5
發行號6
DOIs
出版狀態Published - 2015 九月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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