Organic nonvolatile memory based on low voltage organic thin film transistors with polymer gate electrets

Bo Liang Yeh, Yu Hao Chen, Liang Yun Chiu, Jr Wei Lin, Wei Yu Chen, Jen Sue Chen, Tzu Hsiu Chou, Wei Yang Chou, Fu Ching Tang, Horng Long Cheng

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We demonstrate a simple and an inexpensive approach for the low-temperature fabrication (<200°C) of low-voltage-operated (<20 V), organic, pentacene-based, nonvolatile memory devices with a high- k hafnium dioxide (Hf O2) main dielectric layer and a polymer electret layer. Two kinds of polymer insulators were used as the electret layer, i.e., a poly(vinylalcohol) (PVA) with strong polar groups and an amorphous poly(methyl methacrylate) (PMMA). We studied the memory characteristics of the corresponding devices, including writing and erasing process, long-term retention, and multiple continuous writing/erasing cycles' endurance testing. The memory windows in devices with PVA can be attributed to the dominant short-lifetime shallow traps located at the PVA/pentacene interface and in the pentacene film, whereas those in devices with PMMA are mainly due to the long-lifetime deep traps located in the PMMA layer. The possible sources of shallow-type and deep-type traps in the memory devices were discussed. Accordingly, the devices with the PMMA layer show superior memory characteristics, including a stable memory window of approximately 2.5 V after 20 V 1 s pulse, retaining 80% of memory windows after 103 s and a good endurance properties.

原文English
頁(從 - 到)H277-H280
期刊Journal of the Electrochemical Society
158
發行號3
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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