Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies

Cassidy E. Jackson, Chun Yi Lin, Johan van Tol, Joseph M. Zadrozny

研究成果: Article同行評審

摘要

Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20% of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.

原文English
文章編號137034
期刊Chemical Physics Letters
739
DOIs
出版狀態Published - 2020 一月

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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