Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies

Cassidy E. Jackson, Chun Yi Lin, Johan van Tol, Joseph M. Zadrozny

研究成果: Article

摘要

Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20% of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.

原文English
文章編號137034
期刊Chemical Physics Letters
739
DOIs
出版狀態Published - 2020 一月

指紋

Ions
Data storage equipment
Molecules
Magnetic relaxation
molecules
ions
Molecular orientation
magnetic relaxation
quantum computation
Relaxation time
Paramagnetic resonance
electron paramagnetic resonance
relaxation time
Spectroscopy
Magnetic fields
magnetic fields
spectroscopy
oligomycin sensitivity-conferring protein

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

引用此文

Jackson, Cassidy E. ; Lin, Chun Yi ; van Tol, Johan ; Zadrozny, Joseph M. / Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies. 於: Chemical Physics Letters. 2020 ; 卷 739.
@article{fae103cb4e65477d94db5466159258ab,
title = "Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies",
abstract = "Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20{\%} of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.",
author = "Jackson, {Cassidy E.} and Lin, {Chun Yi} and {van Tol}, Johan and Zadrozny, {Joseph M.}",
year = "2020",
month = "1",
doi = "10.1016/j.cplett.2019.137034",
language = "English",
volume = "739",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",

}

Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies. / Jackson, Cassidy E.; Lin, Chun Yi; van Tol, Johan; Zadrozny, Joseph M.

於: Chemical Physics Letters, 卷 739, 137034, 01.2020.

研究成果: Article

TY - JOUR

T1 - Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies

AU - Jackson, Cassidy E.

AU - Lin, Chun Yi

AU - van Tol, Johan

AU - Zadrozny, Joseph M.

PY - 2020/1

Y1 - 2020/1

N2 - Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20% of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.

AB - Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)2[V(C6H4O2)3]. We demonstrate a variation of 20% of the phase memory relaxation time (Tm) as a function of the orientation of the [V(C6H4O2)3]2– molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.

UR - http://www.scopus.com/inward/record.url?scp=85076490657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076490657&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2019.137034

DO - 10.1016/j.cplett.2019.137034

M3 - Article

AN - SCOPUS:85076490657

VL - 739

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

M1 - 137034

ER -