Orientation of CdTe epitaxial films on GaAs(100) grown by vacuum evaporation

Mau Phon Houng, Shen Li Fu, Fenq Lin Jenq, Jiann Ruey Chen

研究成果: Article

摘要

The growth of (100)- and (111)-oriented CdTe epitaxial layers on (100)-oriented GaAs substrates were investigated. Ar+ plasma bombardment was used to remove the surface oxide layer, while preheating the substrate before evaporation was performed to deplete arsenic on the GaAs substrate surface. Results indicate that the CdTe(100) will grow on GaAs(100) with an oxide layer remaining on the surface. For the GaAs(100) substrate with the oxide layer removed by plasma bombardment, CdTe(100) will grow on the arsenic-depleted GaAs substrate, while CdTe(111) will grow on the GaAs substrate without arsenic depletion. A model is proposed that a tellurium-rich surface is formed on the arsenic-depleted GaAs surface through Ga-Te bonding on which the CdTe(100) will grow, whereas CdTe(111) will grow on a tellurium-poor surface. The photoluminescence investigation conforms to our proposed model.

原文English
頁(從 - 到)105-111
頁數7
期刊Thin Solid Films
203
發行號1
DOIs
出版狀態Published - 1991 八月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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