Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

J. S. Wu, Chun Yen Chang, Chien Ping Lee, Yeong Her Wang, F. Kai

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.

原文English
頁(從 - 到)301-303
頁數3
期刊IEEE Electron Device Letters
10
發行號7
DOIs
出版狀態Published - 1989 七月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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