Origins of efficient green light emission in phase-separated InGaN quantum wells

Yen Lin Lai, Chuan-Pu Liu, Yung Hsiang Lin, Tao Hung Hsueh, Ray Ming Lin, Dong Yuan Lyu, Zhao Xiang Peng, Tai Yuan Lin

研究成果: Article

45 引文 (Scopus)

摘要

Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.

原文English
文章編號020
頁(從 - 到)3734-3739
頁數6
期刊Nanotechnology
17
發行號15
DOIs
出版狀態Published - 2006 八月 14

指紋

Light emission
Semiconductor quantum wells
Photoluminescence
Indium
High resolution transmission electron microscopy
Methyl Green
Carrier transport
Metallorganic chemical vapor deposition
Quantum efficiency
Phase separation
Semiconductor quantum dots
Luminescence
Agglomeration
Diffraction
X rays
Microstructure
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

引用此文

Lai, Y. L., Liu, C-P., Lin, Y. H., Hsueh, T. H., Lin, R. M., Lyu, D. Y., ... Lin, T. Y. (2006). Origins of efficient green light emission in phase-separated InGaN quantum wells. Nanotechnology, 17(15), 3734-3739. [020]. https://doi.org/10.1088/0957-4484/17/15/020
Lai, Yen Lin ; Liu, Chuan-Pu ; Lin, Yung Hsiang ; Hsueh, Tao Hung ; Lin, Ray Ming ; Lyu, Dong Yuan ; Peng, Zhao Xiang ; Lin, Tai Yuan. / Origins of efficient green light emission in phase-separated InGaN quantum wells. 於: Nanotechnology. 2006 ; 卷 17, 編號 15. 頁 3734-3739.
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abstract = "Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5{\%}), higher than the InGaN-matrix related emission (7.5{\%}), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.",
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Lai, YL, Liu, C-P, Lin, YH, Hsueh, TH, Lin, RM, Lyu, DY, Peng, ZX & Lin, TY 2006, 'Origins of efficient green light emission in phase-separated InGaN quantum wells', Nanotechnology, 卷 17, 編號 15, 020, 頁 3734-3739. https://doi.org/10.1088/0957-4484/17/15/020

Origins of efficient green light emission in phase-separated InGaN quantum wells. / Lai, Yen Lin; Liu, Chuan-Pu; Lin, Yung Hsiang; Hsueh, Tao Hung; Lin, Ray Ming; Lyu, Dong Yuan; Peng, Zhao Xiang; Lin, Tai Yuan.

於: Nanotechnology, 卷 17, 編號 15, 020, 14.08.2006, p. 3734-3739.

研究成果: Article

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AU - Lai, Yen Lin

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AU - Lyu, Dong Yuan

AU - Peng, Zhao Xiang

AU - Lin, Tai Yuan

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AB - Green-light-emitting InGaN/GaN multiple quantum wells (MQWs) with high luminescent efficiency were grown by metalorganic chemical vapour deposition (MOCVD). The microstructure of the sample was studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction, while its optical behaviour was analysed in great detail by a variety of photoluminescence methods. Two InGaN-related peaks that were clearly found in the photoluminescence (PL) spectrum are assigned to quasi-quantum dots (516nm) and the InGaN matrix (450nm), respectively, due to a strong phase separation observed by HRTEM. Except for the strong indium aggregation regions (511meV of Stokes shift), slight composition fluctuations were also observed in the InGaN matrix, which were speculated from an 'S-shaped' transition and a Stokes shift of 341meV. Stronger carrier localization and an internal quantum efficiency of the dot-related emission (21.5%), higher than the InGaN-matrix related emission (7.5%), was demonstrated. Additionally, a shorter lifetime and 'two-component' PL decay were found for the low-indium-content regions (matrix). Thus, the carrier transport process within quantum wells is suggested to drift from the low-In-content matrix to the high-In-content dots, resulting in the enhanced luminescence efficiency of the green light emission.

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