Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices

Joel N. Duenow, Ramesh G. Dhere, Darius Kuciauskas, Jian V. Li, Joel W. Pankow, Patricia C. Dippo, Clay M. Dehart, Timothy A. Gessert

研究成果: Conference contribution

10 引文 斯高帕斯(Scopus)

摘要

Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower (6%-8%) than those of high-performance superstrate devices (17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl 2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

原文English
主出版物標題Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
頁面3225-3229
頁數5
DOIs
出版狀態Published - 2012 十一月 26
事件38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
持續時間: 2012 六月 32012 六月 8

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
國家/地區United States
城市Austin, TX
期間12-06-0312-06-08

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 工業與製造工程
  • 電氣與電子工程

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