Oxygen partial pressure impact on characteristics of indium titanium zinc oxide thin film transistor fabricated via RF sputtering

Ming Hung Hsu, Sheng Po Chang, Shoou Jinn Chang, Wei Ting Wu, Jyun Yi Li

研究成果: Article

5 引文 (Scopus)

摘要

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.

原文English
文章編號156
期刊Nanomaterials
7
發行號7
DOIs
出版狀態Published - 2017 七月 1

指紋

Zinc Oxide
Indium
Titanium oxides
Thin film transistors
Zinc oxide
Partial pressure
Oxide films
Sputtering
Oxygen
Oxygen vacancies
Threshold voltage
Electric properties
X ray photoelectron spectroscopy
Optical properties
Thin films
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Chemical Engineering(all)

引用此文

@article{59eb618b4d3a4dd5b9972ecb4f6f8040,
title = "Oxygen partial pressure impact on characteristics of indium titanium zinc oxide thin film transistor fabricated via RF sputtering",
abstract = "Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.",
author = "Hsu, {Ming Hung} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Wu, {Wei Ting} and Li, {Jyun Yi}",
year = "2017",
month = "7",
day = "1",
doi = "10.3390/nano7070156",
language = "English",
volume = "7",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "7",

}

TY - JOUR

T1 - Oxygen partial pressure impact on characteristics of indium titanium zinc oxide thin film transistor fabricated via RF sputtering

AU - Hsu, Ming Hung

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Wu, Wei Ting

AU - Li, Jyun Yi

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.

AB - Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.

UR - http://www.scopus.com/inward/record.url?scp=85021678198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021678198&partnerID=8YFLogxK

U2 - 10.3390/nano7070156

DO - 10.3390/nano7070156

M3 - Article

AN - SCOPUS:85021678198

VL - 7

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 7

M1 - 156

ER -