摘要
Oriented thin films of La0.5Sr0.5CoO3-x were deposited on single-crystal 9.5 mol% Y2O3 stabilized ZrO2 by laser deposition. The films were infused with 18O by exchange with 20 kPa O2 at 300-400 °C, then quenched and depth profiled by secondary ion mass spectroscopy. Analysis of the depth profiles revealed a significant barrier to interfacial transport at these relatively low temperatures.
原文 | English |
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頁(從 - 到) | 59-61 |
頁數 | 3 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 3 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2000 1月 |
All Science Journal Classification (ASJC) codes
- 化學工程 (全部)
- 材料科學(全部)
- 物理與理論化學
- 電化學
- 電氣與電子工程