P-i-n MgBeZnO-based heterostructured ultraviolet LEDs

Hsin Ying Lee, Hao Yu Chang, Li Ren Lou, Ching Ting Lee

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Triple targets of MgO, Be, and Zn and double targets of MgO and Al-doped ZnO were used to deposit i-Mg0.047Be0.083Zn 0.870O films and n-MgZnO:Al films in a magnetron radio frequency co-sputter system. The optical energy bandgap of the i-Mg0.047Be 0.083Zn0.870O films and n-MgZnO:Al films were 3.51 and 3.75 eV, respectively. The electron concentration and mobility of the n-MgZnO:Al films were 5.10 × 1021 cm-3 and 2.30 cm 2/V·s, respectively. The i-Mg0.047Be 0.083Zn0.870O film and n-MgZnO:Al films were sequentially deposited on a p-GaN layer for fabricating p-i-n ultraviolet light-emitting diode heterostructures. The peak emission wavelength of the resulting ultraviolet light-emitting diodes was ranging from 352.8 to 362.6 nm, when the injection current increased from 5 to 80 mA.

原文English
文章編號6571207
頁(從 - 到)1770-1773
頁數4
期刊IEEE Photonics Technology Letters
25
發行號18
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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