摘要
In this letter, p-type and n-type metal-oxide- semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal-oxide- semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was ~ 45 nm. The subthreshold slope and ON-OFF current ratio of the p-MOSFET were ~0.18 V/decade and over 104, respectively. The measurements made of the CMOS device show that it is a good inverter.
原文 | English |
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文章編號 | 7452555 |
頁(從 - 到) | 698-700 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 37 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 2016 6月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 電氣與電子工程