In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the δ-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.
|頁（從 - 到）||L1422-L1424|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 2003 十二月 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)