P-type enhancement-mode SiGe doped-channel field-effect transistor

Yu Min Lin, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

研究成果: Letter同行評審

2 引文 斯高帕斯(Scopus)


In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the δ-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.

頁(從 - 到)L1422-L1424
期刊Japanese Journal of Applied Physics
發行號12 A
出版狀態Published - 2003 12月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)


深入研究「P-type enhancement-mode SiGe doped-channel field-effect transistor」主題。共同形成了獨特的指紋。