TY - JOUR
T1 - P-type enhancement-mode SiGe doped-channel field-effect transistor
AU - Lin, Yu Min
AU - Wu, San Lein
AU - Chang, Shoou Jinn
AU - Koh, Shinji
AU - Shiraki, Yasuhiro
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the δ-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.
AB - In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the δ-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the δ-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.
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U2 - 10.1143/jjap.42.l1422
DO - 10.1143/jjap.42.l1422
M3 - Letter
AN - SCOPUS:0742286298
SN - 0021-4922
VL - 42
SP - L1422-L1424
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12 A
ER -