P-type quasi-mono silicon solar cell fabricated by ion implantation

The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ) and float-zone (FZ) material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG) and the junction isolation process that is required after the conventional thermal POCl₃ diffusion process. Moreover, the good passivation performance of the ion implantation process improves V oc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl₃ diffusion process.