Parameter optimization of PT-IGBT breakdown voltage

Tzu Lang Shih, Chih Chuan Chang, Wen-Shi Lee

研究成果: Conference contribution

摘要

This paper discusses the benefits of different N-drift doping concentration and terminal guard ring diversification on PT-IGBT(Punch Through) breakdown characteristic. The concept IGBT structure consists of MOS components and bipolar components. The former provided by the high-frequency effect, which provides high voltage. In order to increase the breakdown voltage, the N-drift layer concentration needs to be reduced, caused slower on/off switching loss, thermal issue, and power energy loss. The structure optimization is presented and its functionality is verified by 2D simulations with SILVACO TCAD.

原文English
主出版物標題Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
編輯Jia Zhou, Ting-Ao Tang
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479932962
DOIs
出版狀態Published - 2014 一月 23
事件2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
持續時間: 2014 十月 282014 十月 31

出版系列

名字Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
國家China
城市Guilin
期間14-10-2814-10-31

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

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  • 引用此

    Shih, T. L., Chang, C. C., & Lee, W-S. (2014). Parameter optimization of PT-IGBT breakdown voltage. 於 J. Zhou, & T-A. Tang (編輯), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021688] (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021688