The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.
|期刊||Journal of Physics: Conference Series|
|出版狀態||Published - 2019 十二月 20|
|事件||6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation|
持續時間: 2019 四月 22 → 2019 四月 25
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)