Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

V. V. Chistyakov; A. N. Domozhirova; J. C.A. Huang; S. V. Naumov; V. V. Marchenkov

doi:10.1088/1742-6596/1410/1/012199

Peculiarities of the electronic transport in topological materials of Bi₂Se₃ and Mo_xW_1-xTe₂ (x = 0; 0.5; 1)

V. V. Chistyakov, A. N. Domozhirova, J. C.A. Huang, S. V. Naumov, V. V. Marchenkov

物理學系

研究成果: Conference article › 同行評審

摘要

The electrical resistivity of thin films of a topological insulator of Bi₂Se₃ with a thickness of 10 nm to 75 nm, single crystal of Bi₂Se₃ with thickness of 0.65 mm and single crystals of topological Weyl semimetals Mo_xW_1-xTe₂ (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi₂Se₃ films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo_0.5W_0.5Te₂ compound.

原文	English
文章編號	012199
期刊	Journal of Physics: Conference Series
卷	1410
發行號	1
DOIs	https://doi.org/10.1088/1742-6596/1410/1/012199
出版狀態	Published - 2019 12月 20
事件	6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation 持續時間: 2019 4月 22 → 2019 4月 25

All Science Journal Classification (ASJC) codes

一般物理與天文學

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10.1088/1742-6596/1410/1/012199

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title = "Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)",

abstract = "The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.",

author = "Chistyakov, {V. V.} and Domozhirova, {A. N.} and Huang, {J. C.A.} and Naumov, {S. V.} and Marchenkov, {V. V.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 ; Conference date: 22-04-2019 Through 25-04-2019",

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AU - Chistyakov, V. V.

AU - Domozhirova, A. N.

AU - Huang, J. C.A.

AU - Naumov, S. V.

AU - Marchenkov, V. V.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.

AB - The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.

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Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

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Peculiarities of the electronic transport in topological materials of Bi₂Se₃ and Mo_xW_1-xTe₂ (x = 0; 0.5; 1)