Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

V. V. Chistyakov, A. N. Domozhirova, J. C.A. Huang, S. V. Naumov, V. V. Marchenkov

研究成果: Conference article

摘要

The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.

原文English
文章編號012199
期刊Journal of Physics: Conference Series
1410
發行號1
DOIs
出版狀態Published - 2019 十二月 20
事件6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation
持續時間: 2019 四月 222019 四月 25

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

指紋 深入研究「Peculiarities of the electronic transport in topological materials of Bi<sub>2</sub>Se<sub>3</sub> and Mo<sub>x</sub>W<sub>1-x</sub>Te<sub>2</sub> (x = 0; 0.5; 1)」主題。共同形成了獨特的指紋。

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