TY - JOUR
T1 - Pentacene-based thin film transistor with inkjet-printed nanocomposite high-K dielectrics
AU - Liu, Chao Te
AU - Lee, Wen Hsi
AU - Su, Jui Feng
PY - 2012
Y1 - 2012
N2 - The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of 0.58cm 2 V -1 s -1), a large current ratio (>10 3) and a low operation voltage (<6V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.
AB - The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of 0.58cm 2 V -1 s -1), a large current ratio (>10 3) and a low operation voltage (<6V). Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.
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U2 - 10.1155/2012/921738
DO - 10.1155/2012/921738
M3 - Article
AN - SCOPUS:84863263024
SN - 0882-7516
VL - 2012
JO - Active and Passive Electronic Components
JF - Active and Passive Electronic Components
M1 - 921738
ER -