Performance advantage and energy saving of triangular-shaped FinFETs

Kehuey Wu, Wei Wen Ding, Meng Hsueh Chiang

研究成果: Conference contribution

6 引文 斯高帕斯(Scopus)

摘要

Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (Ioff), the on current (Idsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.

原文English
主出版物標題2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
頁面143-146
頁數4
DOIs
出版狀態Published - 2013
事件18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
持續時間: 2013 九月 32013 九月 5

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
國家United Kingdom
城市Glasgow
期間13-09-0313-09-05

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

指紋 深入研究「Performance advantage and energy saving of triangular-shaped FinFETs」主題。共同形成了獨特的指紋。

引用此