Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Jone F. Chen, Jiang Tao, Peng Fang, Chenming Hu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd, asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared.

原文English
頁(從 - 到)367-371
頁數5
期刊IEEE Journal of Solid-State Circuits
34
發行號3
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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