Performance and reliability of asymmetric LDD devices and logic gates

Jone-Fang Chen, Jiang Tao, Peng Fang, Chenming Hu

研究成果: Conference article同行評審

摘要

The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

原文English
頁(從 - 到)533-536
頁數4
期刊Proceedings of the Custom Integrated Circuits Conference
出版狀態Published - 1998 一月 1
事件Proceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA
持續時間: 1998 五月 111998 五月 14

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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