The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.
|頁（從 - 到）||533-536|
|期刊||Proceedings of the Custom Integrated Circuits Conference|
|出版狀態||Published - 1998 一月 1|
|事件||Proceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA|
持續時間: 1998 五月 11 → 1998 五月 14
All Science Journal Classification (ASJC) codes