Performance and reliability of asymmetric LDD devices and logic gates

Jone F. Chen; Jiang Tao; Peng Fang; Chenming Hu

Performance and reliability of asymmetric LDD devices and logic gates

Jone F. Chen
, Jiang Tao
, Peng Fang
, Chenming Hu

微電子工程研究所

研究成果: Conference article › 同行評審

摘要

The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher I_dsat and larger I_sub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V_dd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

原文	English
頁（從 - 到）	533-536
頁數	4
期刊	Proceedings of the Custom Integrated Circuits Conference
出版狀態	Published - 1998
事件	Proceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA 持續時間: 1998 5月 11 → 1998 5月 14

All Science Journal Classification (ASJC) codes

電氣與電子工程

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title = "Performance and reliability of asymmetric LDD devices and logic gates",

abstract = "The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5\% (10\% if PMOSFET also had asymmetric LDD) higher speed and 10\% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.",

author = "Chen, \{Jone F.\} and Jiang Tao and Peng Fang and Chenming Hu",

year = "1998",

language = "English",

pages = "533--536",

journal = "Proceedings of the Custom Integrated Circuits Conference",

issn = "0886-5930",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE Custom Integrated Circuits Conference ; Conference date: 11-05-1998 Through 14-05-1998",

}

TY - JOUR

T1 - Performance and reliability of asymmetric LDD devices and logic gates

AU - Chen, Jone F.

AU - Tao, Jiang

AU - Fang, Peng

AU - Hu, Chenming

PY - 1998

Y1 - 1998

N2 - The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

AB - The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

UR - https://www.scopus.com/pages/publications/0031618199

UR - https://www.scopus.com/pages/publications/0031618199#tab=citedBy

M3 - Conference article

AN - SCOPUS:0031618199

SN - 0886-5930

SP - 533

EP - 536

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

T2 - Proceedings of the 1998 IEEE Custom Integrated Circuits Conference

Y2 - 11 May 1998 through 14 May 1998

ER -

Performance and reliability of asymmetric LDD devices and logic gates

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