Performance characterization of InGaP schottky contact with ITO transparent electrodes

Ching Ting Lee, Ching Hung Fu, Chang Da Tsai, Wei Lin

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 × 10-3 Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.

原文English
頁(從 - 到)1017-1021
頁數5
期刊Journal of Electronic Materials
27
發行號9
DOIs
出版狀態Published - 1998 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Performance characterization of InGaP schottky contact with ITO transparent electrodes」主題。共同形成了獨特的指紋。

引用此