Performance characterization of thin AIN films deposited on mo electrode for thin-film bulk acoustic-wave resonators

Kok Wan Tay, Cheng Liang Huang, Long Wu, Meng Shan Lin

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

In this paper, we discuss the implementation and testing of a film bulk acoustic-wave resonator (FBAR) comprising an AlN piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si3N4) support membrane. In the present study, we choose molybdenum as the bottom electrode rather than the conventionally used Pt/Ti, Au/Cr or Al because it has a low acoustic attenuation and a good electrical conductivity, and provides a good adhesion between the thin AlN film and the low-stress Si3N4 membrane. We investigate the influence of AlN film thickness and top-electrode thickness on the resonance frequency of the FBAR device. The results indicate that decreasing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by the carefully controlling AlN film thickness. Furthermore, it is also determined that the resonance frequency of the device can be increased by specifying a higher RF power for the magnetron sputtering process used to deposit the AlN film. This study employs an X-ray diffraction (XRD) technique to investigate the influence of AlN film thickness and RF power on the c-axis orientation of the thin film. It is shown that increasing either the thickness of the AlN film or the power of the RF sputtering process improves c-axis orientation. However, scanning electron microscopy (SEM) and atomic force microscopy (AFM) results reveal that a thicker AlN film exhibits a rougher surface and a larger grain size, both of which decrease the coupling factor of the FBAR device.

原文English
頁(從 - 到)5510-5515
頁數6
期刊Japanese Journal of Applied Physics
43
發行號8 A
DOIs
出版狀態Published - 2004 8月

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

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