Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure

Wen-Chau Liu, Wei-Chou Hsu, Lih Wen Laih, Jung Hui Tsai, Wen Shiung Lour

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

A high performance metal-insulator-semiconductor-like pseudomorphic field-effect transistor utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure was fabricated and demonstrated. The n--GaAs layer is used as the Schottky contact layer whereas the n+-In0.2Ga0.8As quantum well is employed as the active channel. Due to the excellent properties of the InGaAs layer and carrier confinement effect at the In0.2Ga0.8As-GaAs heterointerface, the device under study shows the advantages of high breakdown voltage, high current capability, very large gate voltage swing for high transconductance operation, and ease of fabrication. For a 2×100 μm2 gate device, a breakdown voltage of 17.4 V, a maximum drain saturation current of 930 mA/mm, a maximum extrinsic transconductance of 230 mS/mm, and a very wide gate voltage range larger than 3 V with the extrinsic transconductance higher than 200 mS/mm are obtained. Therefore, the device has great potential for use in high speed, high power, and large input signal circuit applications.

原文English
頁數1
期刊Applied Physics Letters
出版狀態Published - 1995 十二月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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