Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Ssu I. Fu, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Shiou Ying Cheng, Wen Chau Liu

研究成果: Review article同行評審

4 引文 斯高帕斯(Scopus)

摘要

An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.

原文English
頁(從 - 到)7755-7759
頁數5
期刊Applied Surface Science
252
發行號22
DOIs
出版狀態Published - 2006 9月 15

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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