Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

Chi Shiang Hsu, Sheng Yi Chen, Jian Kai Liou, Wei Cheng Chen, Ching Hong Chang, Chun Yen Chen, Shiou Ying Cheng, Der Feng Guo, Wen Chau Liu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Characteristics of GaN-based light-emitting diodes (LEDs) with 1-D stripe (B-series) and 2-D grid (A-series) Ag metal line patterns are comprehensively studied and reported. Due to the enhanced current spreading capability, as compared to a conventional LED, the significantly reduced forward voltages (>500 mV) of studied A- and B-series devices are obtained under the forward current of 20 mA. Particularly, a very low current coefficient of junction temperature $\text{T}-{\text {j}}$ (0.03°/mA) could be obtained for studied A- and B-series devices which is remarkably superior to the conventional device (0.61°/mA). It means that the undesired thermal effect is nearly negligible in studied devices. Experimentally, based on the less absorption effect of photons from Ag metal lines, the 1-D stripe design (B-series) shows better optical properties than 2-D grid one (A-series). Therefore, based on the appropriate design of transparent 1-D Ag pattern, the improved performance of GaN-based LEDs, including smaller forward voltage, higher light output power, higher external quantum efficiency, higher wall-plug efficiency, and negligible current dependence (wider current operating regime) could be simultaneously attained.

原文English
文章編號7911252
頁(從 - 到)2542-2548
頁數7
期刊IEEE Transactions on Electron Devices
64
發行號6
DOIs
出版狀態Published - 2017 六月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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