Performance enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM photo detectors

Cheng Chung Chu, Yi Jen Chan, Rong Heng Yuang, Jen Inn Chyi, Ching Ting Lee

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.

原文English
頁(從 - 到)1692-1694
頁數3
期刊Electronics Letters
31
發行號19
DOIs
出版狀態Published - 1995 九月 14

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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