An infrared (IR) sensor with the lead-titanate (PbTiO3) thin-film using the technology of micro-eletro-mechanical systems to achieve a better thermal isolation structure has been fabricated and developed. The major IR-sensing part on the cantilever beam with dimensions of 200 × 100 × 2 μm3 consists of a 500-Å PbTiO3 layer deposited by RF sputtering, and an evaporated bismuth (Bi) layer. This thermal isolation improved structure exhibits a much superior performance to that of a traditional IR-sensing bulk structure on the experimental results, which show a 200% and 300% improvement in current gain under the incident optical power 500 μW and 6 V applied bias at room temperature and 77°K, respectively.
|頁（從 - 到）||236-243|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 1998 十二月 1|
|事件||Optoelectronic Materials and Devices - Taipei, Taiwan|
持續時間: 1998 七月 9 → 1998 七月 11
All Science Journal Classification (ASJC) codes