Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact

Yu Chang Li, Yu Ju Lin, Chia Yu Wei, Zheng Xian Lin, Ten-Chin Wen, Mei Ying Chang, Cheng Liang Tsai, Yeong-Her Wang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

With the use of fullerene (C60) /indium tin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work function measured at the ITO/ C60 and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm C60 buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.

原文English
文章編號163303
期刊Applied Physics Letters
95
發行號16
DOIs
出版狀態Published - 2009 十一月 2

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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