Performance improvement mechanisms of bias-assisted photoelectrochemical treated GaSb-based solar cells with ITO nanorod array

Hsin Ying Lee, Hung Lin Huang, Oleg Petrovich Pchelyakov, Nikolay Andreevich Pakhanov

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

To improve the performance of gallium antimonide (GaSb)-based solar cells, the bias-assisted photoelectrochemical (PEC) oxidation method was used to form an oxide passivation layer on the p-GaSb surface. The performance improvement mechanisms were attributed to the effective reduction of the surface state density and the carrier recombination in the solar cells. To further improve performance by reducing light reflection from the top surface of the GaSb-based solar cells, the oblique-angle electron-beam deposition method was used to grow an indium-tin-oxide (ITO) nanorod array on the p-GaSb surface as the antireflection coating. High performance of the resulting GaSb-based solar cells was obtained compared with the conventional solar cells.

原文English
頁(從 - 到)195-199
頁數5
期刊Progress in Photovoltaics: Research and Applications
24
發行號2
DOIs
出版狀態Published - 2016 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

指紋 深入研究「Performance improvement mechanisms of bias-assisted photoelectrochemical treated GaSb-based solar cells with ITO nanorod array」主題。共同形成了獨特的指紋。

引用此