Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method

Tsung I. Liao, Sheng-Po Chang, Wen Xiang Shi, Shoou Jinn Chang, Jone Fang Chen

研究成果: Article同行評審

摘要

The thin film of indium gallium tin oxide (IGTO) was deposited by the RF magnetron sputtering system with different oxygen flow ratios, which controls the numbers of defects and free carriers to change the characteristics of thin-film transistors ((TFTs). We determined the subgap density-of-states (DOS) from the transfer characteristics curve by the unified subthreshold coupling factor technique to analyze the response of oxygen-related trap sites within the thin films fabricated under different oxygen flows. We used Python to fit the DOS data with a combination of two exponential forms, inferring that, during the increase in the oxygen flow ratio, acceptor-like oxygen-related trap sites can be gradually compensated. The IGTO TFTs exhibit optimized performance when subjected to annealing at 200 °C for 1 h with a 5% oxygen flow ratio, showing a threshold voltage (Vth) of 1.76 V, a field-effect mobility of 0.355 cm2/V s, an impressive on/off drain current ratio of 1.42 × 106, and a subthreshold swing (SS) of 0.665 V/decade.

原文English
頁(從 - 到)3063-3069
頁數7
期刊Journal of Electronic Materials
53
發行號6
DOIs
出版狀態Published - 2024 6月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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