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Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method
Tsung I. Liao, Sheng Po Chang, Wen Xiang Shi,
Shoou Jinn Chang
,
Jone Fang Chen
微奈米科技研究中心
微電子工程研究所
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Engineering & Materials Science
Reactive sputtering
100%
Thin film transistors
80%
Doping (additives)
70%
Tin oxides
29%
Thin films
19%
Magnetron sputtering
14%
Oxide films
13%
Threshold voltage
11%
Annealing
10%
Defects
7%
Chemical Compounds
Reactive Sputtering
94%
Flow
40%
Density of State
34%
Tin Oxide
33%
Dioxygen
30%
Drain Current
24%
Magnetron Sputtering
18%
Field Effect
15%
Annealing
12%
Compound Mobility
12%
Voltage
11%
Physics & Astronomy
transistors
50%
sputtering
49%
oxygen
38%
thin films
32%
performance
27%
gallium oxides
27%
tin oxides
20%
indium
20%
traps
15%
threshold voltage
9%
magnetron sputtering
8%
annealing
6%
defects
5%
curves
5%