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Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method
Tsung I. Liao, Sheng Po Chang, Wen Xiang Shi,
Shoou Jinn Chang
,
Jone Fang Chen
微奈米科技研究中心
微電子工程研究所
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Keyphrases
Performance Improvement
100%
Thin-film Transistors
100%
Amorphous InGaZnO (a-IGZO)
100%
Reactive Sputtering
100%
Sputtering Method
100%
Oxygen Flow Ratio
100%
Oxygen Doping
100%
Indium Gallium Nitride (InGaN)
66%
Trap Site
66%
Annealing
33%
Field-effect Mobility
33%
Density of States
33%
RF Sputtering Method
33%
Subthreshold Swing
33%
Drain Current
33%
Current Ratio
33%
Transfer Characteristics
33%
Threshold Voltage
33%
Oxide Thin-film Transistors
33%
State Data
33%
Free Carriers
33%
Defect numbers
33%
Tin Oxide Thin Film
33%
Characteristic Curve
33%
Performance Optimization
33%
Coupling Factor
33%
Oxygen Flow
33%
Subthreshold
33%
Exponential Form
33%
Python
33%
Subgap Density of States
33%
Material Science
Thin-Film Transistor
100%
Indium
66%
Density
66%
Gallium
66%
Thin Films
66%
Tin Oxide
66%
Magnetron Sputtering
33%
Engineering
Performance Improvement
100%
Thin-Film Transistor
100%
Reactive Sputtering
100%
Thin Films
66%
Magnetron
33%
Current Ratio
33%
Characteristic Curve
33%
Chemical Engineering
Film
100%
Reactive Sputtering
100%
Indium
50%
Tin Oxide
50%
Magnetron Sputtering
25%