摘要
The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about 3.64 × 10{5} and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was 8.08 × 10{3} , indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to 4.2 × 10{6} and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.
| 原文 | English |
|---|---|
| 文章編號 | 9455387 |
| 頁(從 - 到) | 18682-18687 |
| 頁數 | 6 |
| 期刊 | IEEE Sensors Journal |
| 卷 | 21 |
| 發行號 | 17 |
| DOIs | |
| 出版狀態 | Published - 2021 9月 1 |
All Science Journal Classification (ASJC) codes
- 儀器
- 電氣與電子工程
指紋
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