Performance Improvement of GaN-Based Light-Emitting Diodes with a Microhole Array, 45° Sidewalls, and a SiO2 Nanoparticle/Microsphere Passivation Layer

Ching Hong Chang, Yu Lin Lee, Zih Fong Wang, Rong Chau Liu, Jung Hui Tsai, Wen Chau Liu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The characteristics of GaN-based light-emitting diodes (LEDs) with a hybrid structure incorporating a microhole array, 45 sidewalls, and an appropriate SiO2 nanoparticle (NP)/microsphere (MSs) passivation layer are studied and reported. The use of a SiO2 NP/MSs passivation layer causes a remarkable reduction in reverse-biased leakage current. The employment of this hybrid structure leads to substantial enhancements in optical properties without any degradation in electrical performance. In addition, a lower content of SiO2 NP in the mixed SiO2 NP/MSs solution leads to enhanced optical behavior due to the improved transmittance. Experimentally, as compared with a conventional LED (Device A), the studied Device E shows 50.6%, 50.9%, 48.4%, and 49.9% enhancements in light output power, luminous flux, luminous efficacy, and wall-plug efficiency, respectively. These advantages are mainly attributed to the increased scattering probability and the opportunity to find photon escape cones as well as the reduced total internal reflection and Fresnel reflection effects. Therefore, the studied hybrid structure provides a promise for high-performance GaN-based LED applications.

原文English
文章編號8573125
頁(從 - 到)505-511
頁數7
期刊IEEE Transactions on Electron Devices
66
發行號1
DOIs
出版狀態Published - 2019 一月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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