Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

Chih Jen Hsiao, Minh Thien Huu Ha, Chun Kuan Liu, Hong Quan Nguyen, Hung Wei Yu, Sheng Po Chang, Yuen Yee Wong, Jer Shen Maa, Shoou Jinn Chang, Edward Yi Chang

研究成果: Article

1 引文 (Scopus)

摘要

Strain-relieved GaSb quantum dots on GaAs can be achieved by either periodic interfacial misfit (IMF) or the conventional Stranski–Krastanov (SK) growth modes by changing the growth parameters. In this study, the Sb interfacial treatment was employed to improve the GaSb crystal quality including low defect density, smooth surface morphology, and high hole mobility. This technique yields two-dimensional (2D) islands with a height as low as 1.7 nm and width up to 190 nm in the IMF growth mode. In contrast to the interfacial treatments conventionally employed in the initial strain relaxation of GaSb/GaAs hererostructure, the Sb treatment promotes the formation of strong Ga-Sb bonds on the surface of the grown island, which effectively reduces the interfacial free energy and thus promotes the formation of 2D islands. With the Sb interfacial treatment, a high-relaxation 100-nm GaSb epilayer was grown on the GaAs substrate, the epilayers was strain relaxed and exhibited enhanced electrical properties with a high hole mobility of ~667 cm2 V−1 s−1 and with superior optical properties as evidenced by the photoluminescence B-line peak. The results of this study demonstrate an effective interfacial-treatment growth technique to relax the initial strain for the highly mismatched GaSb layers grown on a GaAs substrate.

原文English
頁(從 - 到)845-855
頁數11
期刊Journal of Materials Science: Materials in Electronics
28
發行號1
DOIs
出版狀態Published - 2017 一月 1

指紋

Chemical vapor deposition
vapor deposition
Hole mobility
Epilayers
hole mobility
Strain relaxation
Defect density
Substrates
Free energy
Semiconductor quantum dots
Surface morphology
Photoluminescence
Electric properties
Optical properties
Crystals
free energy
electrical properties
quantum dots
gallium arsenide
photoluminescence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Hsiao, Chih Jen ; Ha, Minh Thien Huu ; Liu, Chun Kuan ; Nguyen, Hong Quan ; Yu, Hung Wei ; Chang, Sheng Po ; Wong, Yuen Yee ; Maa, Jer Shen ; Chang, Shoou Jinn ; Chang, Edward Yi. / Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition. 於: Journal of Materials Science: Materials in Electronics. 2017 ; 卷 28, 編號 1. 頁 845-855.
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abstract = "Strain-relieved GaSb quantum dots on GaAs can be achieved by either periodic interfacial misfit (IMF) or the conventional Stranski–Krastanov (SK) growth modes by changing the growth parameters. In this study, the Sb interfacial treatment was employed to improve the GaSb crystal quality including low defect density, smooth surface morphology, and high hole mobility. This technique yields two-dimensional (2D) islands with a height as low as 1.7 nm and width up to 190 nm in the IMF growth mode. In contrast to the interfacial treatments conventionally employed in the initial strain relaxation of GaSb/GaAs hererostructure, the Sb treatment promotes the formation of strong Ga-Sb bonds on the surface of the grown island, which effectively reduces the interfacial free energy and thus promotes the formation of 2D islands. With the Sb interfacial treatment, a high-relaxation 100-nm GaSb epilayer was grown on the GaAs substrate, the epilayers was strain relaxed and exhibited enhanced electrical properties with a high hole mobility of ~667 cm2 V−1 s−1 and with superior optical properties as evidenced by the photoluminescence B-line peak. The results of this study demonstrate an effective interfacial-treatment growth technique to relax the initial strain for the highly mismatched GaSb layers grown on a GaAs substrate.",
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Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition. / Hsiao, Chih Jen; Ha, Minh Thien Huu; Liu, Chun Kuan; Nguyen, Hong Quan; Yu, Hung Wei; Chang, Sheng Po; Wong, Yuen Yee; Maa, Jer Shen; Chang, Shoou Jinn; Chang, Edward Yi.

於: Journal of Materials Science: Materials in Electronics, 卷 28, 編號 1, 01.01.2017, p. 845-855.

研究成果: Article

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T1 - Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

AU - Hsiao, Chih Jen

AU - Ha, Minh Thien Huu

AU - Liu, Chun Kuan

AU - Nguyen, Hong Quan

AU - Yu, Hung Wei

AU - Chang, Sheng Po

AU - Wong, Yuen Yee

AU - Maa, Jer Shen

AU - Chang, Shoou Jinn

AU - Chang, Edward Yi

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Strain-relieved GaSb quantum dots on GaAs can be achieved by either periodic interfacial misfit (IMF) or the conventional Stranski–Krastanov (SK) growth modes by changing the growth parameters. In this study, the Sb interfacial treatment was employed to improve the GaSb crystal quality including low defect density, smooth surface morphology, and high hole mobility. This technique yields two-dimensional (2D) islands with a height as low as 1.7 nm and width up to 190 nm in the IMF growth mode. In contrast to the interfacial treatments conventionally employed in the initial strain relaxation of GaSb/GaAs hererostructure, the Sb treatment promotes the formation of strong Ga-Sb bonds on the surface of the grown island, which effectively reduces the interfacial free energy and thus promotes the formation of 2D islands. With the Sb interfacial treatment, a high-relaxation 100-nm GaSb epilayer was grown on the GaAs substrate, the epilayers was strain relaxed and exhibited enhanced electrical properties with a high hole mobility of ~667 cm2 V−1 s−1 and with superior optical properties as evidenced by the photoluminescence B-line peak. The results of this study demonstrate an effective interfacial-treatment growth technique to relax the initial strain for the highly mismatched GaSb layers grown on a GaAs substrate.

AB - Strain-relieved GaSb quantum dots on GaAs can be achieved by either periodic interfacial misfit (IMF) or the conventional Stranski–Krastanov (SK) growth modes by changing the growth parameters. In this study, the Sb interfacial treatment was employed to improve the GaSb crystal quality including low defect density, smooth surface morphology, and high hole mobility. This technique yields two-dimensional (2D) islands with a height as low as 1.7 nm and width up to 190 nm in the IMF growth mode. In contrast to the interfacial treatments conventionally employed in the initial strain relaxation of GaSb/GaAs hererostructure, the Sb treatment promotes the formation of strong Ga-Sb bonds on the surface of the grown island, which effectively reduces the interfacial free energy and thus promotes the formation of 2D islands. With the Sb interfacial treatment, a high-relaxation 100-nm GaSb epilayer was grown on the GaAs substrate, the epilayers was strain relaxed and exhibited enhanced electrical properties with a high hole mobility of ~667 cm2 V−1 s−1 and with superior optical properties as evidenced by the photoluminescence B-line peak. The results of this study demonstrate an effective interfacial-treatment growth technique to relax the initial strain for the highly mismatched GaSb layers grown on a GaAs substrate.

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