Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow

Hsin Chieh Yu, Cheng Tien Wan, Wei Cheng Chen, Wei Chou Hsu, Ke Hua Su, Chun Yuan Huang, Yan Kuin Su

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

原文English
文章編號012103
期刊Applied Physics Express
4
發行號1
DOIs
出版狀態Published - 2011 一月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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