Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate

Chien Chang Huang, Chun Chia Chen, Jian Kai Liou, Po Cheng Chou, Huey Ing Chen, Shiou Ying Cheng, Wen Chau Liu

研究成果: Conference contribution

摘要

An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.

原文English
主出版物標題Frontier of Nanoscience and Technology
發行者Trans Tech Publications Ltd
頁面891-895
頁數5
ISBN(列印)9783037852101
DOIs
出版狀態Published - 2011 一月 1

出版系列

名字Materials Science Forum
694
ISSN(列印)0255-5476
ISSN(電子)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • 引用此

    Huang, C. C., Chen, C. C., Liou, J. K., Chou, P. C., Chen, H. I., Cheng, S. Y., & Liu, W. C. (2011). Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate. 於 Frontier of Nanoscience and Technology (頁 891-895). (Materials Science Forum; 卷 694). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.694.891