Performance of metamorphic transistors with δ-doped structures

Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Chung I. Kao, Wen-Chau Liu

研究成果: Article同行評審

摘要

The interesting dc, microwave, and power performance of double and single δ-doped metamorphic high electron mobility transistors (MHEMTs), grown by molecular beam epitaxy, are studied. Because of the use of a double δ-doped structure, the increase of carrier density and uniform distribution of carriers within the channel are found. Therefore, the superior characteristics in the drain saturation current of 544.4 (523.9) mA/mm, extrinsic transconductance of 361.2 (312.4) mS/mm, drain current operation region of 236.9 (227.4) mA/mm, unity current gain cutoff frequency of 55.1 GHz, maximum oscillation frequency of 129.17 GHz, output power of 15.35 dBm, power gain of 24.65 dB, and power added efficiency of 39.4% could be achieved for a 0.6 × 100 μm2 gate dimension MHEMT at 300 (510) K. With increasing the temperature from 300 to 510 K, the slight temperature variation rates are also found for the studied device with a double δ-doped structure.On the other hand, the kink effect and impact ionization for the studied device with a double δ-doped structure are considerably suppressed.

原文English
頁(從 - 到)13476-13479
頁數4
期刊Journal of Physical Chemistry C
115
發行號27
DOIs
出版狀態Published - 2011 七月 14

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

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