Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.