Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature

Yuhua Lee, S. H. Huang, J. F. Min, S. T. Lin, Wei-Yang Chou

研究成果: Conference contribution

摘要

Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

原文English
主出版物標題Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications
頁面68-73
頁數6
出版狀態Published - 2007 十二月 1
事件Organic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 2007 四月 92007 四月 13

出版系列

名字Materials Research Society Symposium Proceedings
1003
ISSN(列印)0272-9172

Other

OtherOrganic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting
國家United States
城市San Francisco, CA
期間07-04-0907-04-13

指紋

Zinc Oxide
luminance
Zinc oxide
zinc oxides
Luminance
Anodes
anodes
ITO (semiconductors)
Ion beams
ion beams
Electric potential
electric potential
beam currents
Temperature
Oxide films
Light emitting diodes
Sputtering
oxide films
Polymers
light emitting diodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

Lee, Y., Huang, S. H., Min, J. F., Lin, S. T., & Chou, W-Y. (2007). Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature. 於 Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications (頁 68-73). (Materials Research Society Symposium Proceedings; 卷 1003).
Lee, Yuhua ; Huang, S. H. ; Min, J. F. ; Lin, S. T. ; Chou, Wei-Yang. / Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature. Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications. 2007. 頁 68-73 (Materials Research Society Symposium Proceedings).
@inproceedings{18466137d7974dc193033a5b9ee55947,
title = "Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature",
abstract = "Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.",
author = "Yuhua Lee and Huang, {S. H.} and Min, {J. F.} and Lin, {S. T.} and Wei-Yang Chou",
year = "2007",
month = "12",
day = "1",
language = "English",
isbn = "9781605604367",
series = "Materials Research Society Symposium Proceedings",
pages = "68--73",
booktitle = "Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications",

}

Lee, Y, Huang, SH, Min, JF, Lin, ST & Chou, W-Y 2007, Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature. 於 Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications. Materials Research Society Symposium Proceedings, 卷 1003, 頁 68-73, Organic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting, San Francisco, CA, United States, 07-04-09.

Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature. / Lee, Yuhua; Huang, S. H.; Min, J. F.; Lin, S. T.; Chou, Wei-Yang.

Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications. 2007. p. 68-73 (Materials Research Society Symposium Proceedings; 卷 1003).

研究成果: Conference contribution

TY - GEN

T1 - Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature

AU - Lee, Yuhua

AU - Huang, S. H.

AU - Min, J. F.

AU - Lin, S. T.

AU - Chou, Wei-Yang

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

AB - Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

UR - http://www.scopus.com/inward/record.url?scp=70349921520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349921520&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:70349921520

SN - 9781605604367

T3 - Materials Research Society Symposium Proceedings

SP - 68

EP - 73

BT - Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications

ER -

Lee Y, Huang SH, Min JF, Lin ST, Chou W-Y. Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature. 於 Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications. 2007. p. 68-73. (Materials Research Society Symposium Proceedings).