Performance on GaN-based light-emitting diodes with different substrate tilt angles

Jian Kai Liou, Yi Jing Liu, Shiou Ying Cheng, Po Cheng Chou, Chiun Chia Chen, Wen Chau Liu

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

The electrostatic discharge (ESD) performance of GaN-based light-emitting diodes (LEDs) with naturally-textured p-GaN contact layers grown on c-axis miscut sapphire substrates are studied. During machine model tests, the device grown on a 0.35° miscut sapphire shows the highest ESD tolerance, while the one grown on a 0.2° miscut sapphire exhibits the poorest tolerance. It is discovered that this effect correlates with the presence of maximum capacitance (Cm) values, over the difference in defect densities between LEDs. The variation in Cm values is caused by parasitic capacitance effect induced by different p-GaN surface morphologies between the studied devices. This observation gives us more reliable application in improving ESD performance based on the device grown on a 0.35° miscut sapphire.

原文English
主出版物標題Frontier of Nanoscience and Technology
發行者Trans Tech Publications Ltd
頁面842-846
頁數5
ISBN(列印)9783037852101
DOIs
出版狀態Published - 2011

出版系列

名字Materials Science Forum
694
ISSN(列印)0255-5476
ISSN(電子)1662-9752

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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