Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

Hau Yuan Huang; Shui Jinn Wang; Chien Hung Wu; Chen Kuo Chiang; Je Yi Su

doi:10.1063/1.4795127

Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

Hau Yuan Huang, Shui Jinn Wang, Chien Hung Wu, Chen Kuo Chiang, Je Yi Su

微電子工程研究所

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 10⁵ to 1.9 × 10⁶, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.

原文	English
文章編號	092108
期刊	Applied Physics Letters
卷	102
發行號	9
DOIs	https://doi.org/10.1063/1.4795127
出版狀態	Published - 2013 3月 4

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4795127

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title = "Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer",

abstract = "Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.",

author = "Huang, {Hau Yuan} and Wang, {Shui Jinn} and Wu, {Chien Hung} and Chiang, {Chen Kuo} and Su, {Je Yi}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China, under Grant Nos. NSC 100-2221-E-006-156-MY2 and NSC 100-2221-E-006-045-MY2, and by the Landmark Project Grant for NCKU's Top-University Project.",

year = "2013",

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day = "4",

doi = "10.1063/1.4795127",

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T1 - Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

AU - Huang, Hau Yuan

AU - Wang, Shui Jinn

AU - Wu, Chien Hung

AU - Chiang, Chen Kuo

AU - Su, Je Yi

N1 - Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China, under Grant Nos. NSC 100-2221-E-006-156-MY2 and NSC 100-2221-E-006-045-MY2, and by the Landmark Project Grant for NCKU's Top-University Project.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.

AB - Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

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