Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

Li Yi Jian, Hsin Ying Lee, Yung Hao Lin, Ching Ting Lee

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.

原文English
頁(從 - 到)54-57
頁數4
期刊Solid-State Electronics
145
DOIs
出版狀態Published - 2018 七月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors」主題。共同形成了獨特的指紋。

  • 引用此